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 . Obtain I anode-V anode characteristics. Make your own choice of the concrete values based on your knowledge of semiconductor devices. What is the threshold voltage (VT)?
 2. Plot conduction and valence band profile along the middle of the gate when the  device is a) off, and b) on. Overlap the plot of conduction and valence band profile with the plot of electron density.
 3. Make such changes in a device architecture that you will achieve an increase in the drain current at the overdrive of 1.0 V (Vanode-VT=1.0 V) about 50% or more. The changes in the device architecture have to be justified using physical arguments in the report and be physically achievable. Use your knowledge from the module Semiconductor Technology if needed. 

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